BUZ11A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 26 A

Maximum Junction Temperature (Tj): 175 °C

Drain-Source Capacitance (Cd): 900 pF

Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm

Package: TO220