IRF1010EPBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 84 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 130 nC

Rise Time (tr): 78 nS

Drain-Source Capacitance (Cd): 690 pF

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: TO-220