IRF3808PBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 330 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 140 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 150 nC

Rise Time (tr): 140 nS

Drain-Source Capacitance (Cd): 890 pF

Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm

Package: TO-220AB