• IRF830 N-Channel TO220 500V 4.5A GDS – MOSFET

IRF830PBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 74 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold V

IRF830 N-Channel TO220 500V 4.5A GDS – MOSFET

  • R 32.29

  • Ex Tax: R 28.08

Tags: SEMICONDUCTORS, MOSFETS, TRANSISTORS