• IRF510PBF N-Channel TO220 100V 5.6A GDS – MOSFET

IRF510PBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 43 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold V

IRF510PBF N-Channel TO220 100V 5.6A GDS – MOSFET

  • R 28.43

  • Ex Tax: R 24.72

Tags: SEMICONDUCTORS, MOSFETS, TRANSISTORS